AM81719-040 Datasheet, PDF (1/3 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS TELEMETRY APPLICATIONS

AM81719-040
RF & MICROWAVE TRANSISTORS
TELEMETRY APPLICATIONS
...... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P_OUT = 40 W MIN. WITH 7 dB GAIN
PRELIMINARY DATA
.400 X .400 2 LFL (M228)
hermetically sealed
ORDER CODE
AM81719-040
BRANDING
81719-40
PIN CONNECTION
DESCRIPTION
The AM81719-040 is a high power silicon NPN
bipolar transistor designed for Class C, CW com-
munications and telemetry applications in the
1.75 - 1.85 GHz frequency range.
An emitter-ballasted refractory-gold overlay die
geometry with computerized automatic wire-
bonding is employed to ensure long-term reliabil-
ity and product consistency.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C)
Symbol
P ar ame te r
PDIS S
Power Dissipation*
IC
Device Current*
VCC
Collector-Supply Voltage*
TJ
Junction Temperature
T ST G
Storage Temperature
THERMAL DATA
R_{TH (j -c)}
Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
1. Collector
2. Base
3. Emitter
4. Base
V alu e
Un it
79.5
W
4.8
A
30
V
200
°_C
− 65 to +200
°_C
2.2
°_C/W
July 6, 1995
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