AM81214-060 Datasheet, PDF (1/6 Pages) STMicroelectronics – L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM81214-060
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
RUGGEDIZED VSWR ∞:1
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P_OUT = 55 W MIN. WITH 6.6 dB GAIN
.400 x .400 2NLFL (S042)
hermeticaly sealed
ORDER CODE
AM81214-060
BRANDING
81214-60
DESCRIPTION
The AM81214-060 device is a high power transistor
specifically designed for L-Band radar pulsed out-
put and driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding ∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM81214-060 is supplied in the AMPAC™
Hermetic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
P_DISS
Pa ra met er
Power Dissipation* (T_C ≤ 100°C)
IC
Device Current*
VCC
Collector-Supply Voltage*
T_J
Junction Temperature (Pulsed RF Operation)
T_STG
Storage Temperature
Value
107
Unit
W
5.0
A
32
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
August 1992
1.4
°C/W
1/6