AM81214-030 Datasheet, PDF (1/6 Pages) STMicroelectronics – L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM81214-030
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
RUGGEDIZED VSWR _∞:1
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 26 W MIN. WITH 7.2 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM81214-030
BRANDING
81214-30
DESCRIPTION
The AM81214-030 device is a high power transistor
specifically designed for L-Band Radar pulsed
driver applications.
The device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding _∞:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM81214-030 is supplied in the IMPAC™ Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symb ol
P_DISS
Pa ra met er
Power Dissipation* (T_C ≤ 100°C)
IC
Device Current*
VCC
Collector-Supply Voltage*
T_J
Junction Temperature (Pulsed RF Operation)
T_STG
Storage Temperature
Value
63
Unit
W
2.75
A
32
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
2.4
°C/W
August 1992
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