AM80912-085 Datasheet, PDF (1/5 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM80912-085
RF & MICROWAVE TRANSISTORS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P_OUT = 85 W MIN. WITH 7.5 dB GAIN
AVIONICS APPLICATIONS
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
AM80912-085
B RA ND IN G
80912-85
PIN CONNECTION
DESCRIPTION
The AM80912-085 is designed for specialized
avionics applications including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM80912-085 is housed in a unique BIG-
PAC™ Hermetic Metal/Ceramic package with in-
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symb ol
P_DISS
Pa ra met er
Power Dissipation* (T_C ≤ 100°C)
IC
Device Current*
VCC
Collector-Supply Voltage*
T_J
T_STG
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
300
Unit
W
8.0
A
40
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.75
°C/W
August 1992
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