AM80912-005 Datasheet, PDF (1/4 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM80912-005
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P_OUT = 6.0 W MIN. WITH 9.3 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM80912-005
BRANDING
80912-5
PIN CONNECTION
DESCRIPTION
The AM80912-005 is designed for specialized
avionics applications, including JTIDS, where
power is provided under pulse formats utilizing
short pulse widths and high burst or overall duty
cycles.
The AM80912-005 is housed in the unique
IMPAC™ Hermetic Metal/Ceramic package with
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symb ol
PDISS
Pa ra met er
Power Dissipation* (TC ≤ 75°C)
I_C
Device Current*
V_CC
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
Value
25
Unit
W
0.9
A
32
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
7.0
°C/W
August 1992
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