AM80814-025 Datasheet, PDF (1/3 Pages) STMicroelectronics – L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM80814-025
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 25 W MIN. WITH 7.0 dB GAIN
PRELIMINARY DATA
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM80814-025
BRANDING
80814-25
DESCRIPTION
AM80814-025 is a high power silicon Class C tran-
sistor designed for ultra-broadband L-Band radar
applications.
This device is capable of operation over a broad
range of pulse widths and duty cycles. Low RF
thermal resistance and computerized automatic
wire bonding techniques ensure high reliability and
product consistency.
AM80814-025 is supplied in the industry-standard
AMPAC™ hermetic Metal/Ceramic package incor-
porating Input/Output impedance matching.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symbol
Parameter
PDISS
Power Dissipation*(TC ≤ 75˚C)
IC
Device Current*
VCC
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
75
Unit
W
3.5
A
38
V
250
°_C
− 65 to +200
°_C
2.3
°_C/W
August 1992
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