AM80814-005 Datasheet, PDF (1/5 Pages) STMicroelectronics – L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM80814-005
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
5:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 5.0 W MIN. WITH 8.5 dB GAIN
.310 x .310 2LFL (S064)
hermetically sealed
ORDER CODE
AM80814-005
BRANDING
80814-5
DESCRIPTION
The AM80814-005 device is a high power Class
C transistor specifically designed for L-Band radar
pulsed driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding 5:1 output
VSWR at rated RF conditions. Low thermal re-
sistance and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency.
The AM80814-005 is supplied in the IMPAC™ Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symb ol
Parameter
P_DISS
Power Dissipation* (T_C ≤ 100°C)
IC
Device Current*
VCC
Collector-Supply Voltage*
T_J
Junction Temperature (Pulsed RF Operation)
T_STG
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
23
Unit
W
1.0
A
28
V
250
°_C
- 65 to +200
°_C
6.5
°C/W
August 1992
1/5