AM80610-030 Datasheet, PDF (1/3 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS UHF COMMUNICATIONS APPLICATIONS

AM80610-030
RF & MICROWAVE TRANSISTORS
UHF COMMUNICATIONS APPLICATIONS
..... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
INPUT/OUTPUT MATCHING
METAL/CERAMIC HERMETIC PACKAGE
POUT = 30 W MIN. WITH 8.5 dB GAIN
.400 x .400 2NLF L (S042)
hermetically sealed
ORDER CODE
AM80610-030
BRANDING
80610-30
DE S CRI P T IO N
The AM80610-030 is a high power, common
base NPN silicon bipolar device optimized for
CW operation in the 620 - 960 MHz frequency
range.
AM80610-030 utilizes a rugged, overlay, emitter-
ballasted L-Band die geometry to achieve high
gain and collector efficiency and is suitable for
driver or output stage use in Class C power am-
plifiers. Typical applications include military com-
munications, ECM, and test equipment.
The AM80610-030 is provided in the industry-
standard, metal/ceramic AMPAC™ hermetic
package.
ABSOLUTE MAXIMUM RATINGS (T_case = 25°C)
Symbol
Parameter
P_DISS
Power Dissipation* (T_C ≤ 50°C)
IC
Device Current*
VCC
Collector-Supply Voltage*
TJ
Junction Temperature
T ST G
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
57
W
3.0
A
32
V
200
°_C
− 65 to +200
°_C
2.6
°_C/W