AM2729-125 Datasheet, PDF (1/6 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS

AM2729-125
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 125 W MIN. WITH 7.0 dB GAIN
DESCRIPTION
The AM2729-125 device is a high power silicon
bipolar NPN transistor specifically designed for
medium pulse S-Band radar output and driver
applications.
This device is characterized at 50 µsec pulse
width and 10% duty cycle, but is capable of op-
eration over a range of pulse widths, duty cycles
and temperatures. Low RF thermal resistance,
refractory/gold metallization and computerized
automatic wire bonding techniques ensure high
reliability and product consistency (including
phase characteristics).
The AM2729-125 is supplied in the BIGPAC™
Hermetic Metal/Ceramic package with internal In-
put/Output impedance matching circuitry, and is
intended for military and other high reliability ap-
plications.
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM2729-125
BRANDING
2729-125
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
Parameter
PDISS
Power Dissipation* (TC ≤ 75°C)
IC
Device Current*
VCC
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
T ST G
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
Unit
500
W
16
A
45
V
250
°_C
− 65 to +200
°_C
0.35
°_C/W