AM2729-110 Datasheet, PDF (1/4 Pages) STMicroelectronics – S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM2729-110
RF & MICROWAVE TRANSISTORS
S-BAND RADAR APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
3:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 105 W MIN. WITH 6.5 dB GAIN
.400 x .500 2L SFL (S138)
hermeticaly sealed
ORDER CODE
AM2729-110
B RA ND IN G
2729-110
DESCRIPTION
The AM2729-110 device is a high power silicon
bipolar NPN transistor specifically designed for S-
Band radar pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and can withstand a 3:1 output VSWR. Low
RF thermal resistance, refractory/gold metalliza-
tion, and computerized automatic wire bonding
techniques ensure high reliability and product con-
sistency (including phase characteristics).
The AM2729-110 is supplied in the BIGPAC™ Her-
metic Metal/Ceramic package with internal
Input/Output matching circuitry, and is intended
for military and other high reliability applications.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symb ol
Pa ra met er
P_DISS
Power Dissipation* (T_C ≤ 100°C)
IC
Device Current*
VCC
Collector-Supply Voltage*
T_J
Junction Temperature (Pulsed RF Operation)
T_STG
Storage Temperature
Value
438
Unit
W
12
A
48
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.4
°C/W
August 1992
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