AM1517-025 Datasheet, PDF (1/8 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS SATELLITE COMMUNICATIONS APPLICATIONS

AM1517-025
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
• REFRACTORY/GOLD METALLIZATION
• EMITTER SITE BALLASTED
• ∞:1 VSWR CAPABILITY
• LOW THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METALLIC/CERAMIC HERMETIC PACKAGE
• P_OUT = 25 W MIN. WITH 8.5 dB GAIN
SO42
hermetically sealed
ORDER CODE
AM1517-025
BRANDING
1517-25
DESCRIPTION
The AM1517-025 power transistor is designed
specifically for Satellite communications applica-
tions in the 1.5 - 1.7 frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞:1) under full rated conditions. The unit is an
overlay, emitter site ballasted, geometry utilizing a
refractory/Gold metallization system.
The AM1517-025 is supplied in the AMPAC^TM
Hermetic/Ceramic package with internal Input/
Output matching structures.
ABSOLUTE MAXIMUM RATINGS(T_CASE = 25 ⁰C)
Symbol
Parameter
P_DISS
I_C
Power Dissipation* ( Tc≤ 50 ⁰C)
Device Current*
V_CC
Collector-Supply Voltage*
T_j
Junction Temperature
T_STG Storage Temperature
THERMAL DATA
R_th(j-c) Junction-Case Thermal Resistance*
* Applies only to rated RF amplifier operation
May 2000
PIN CONNECTION
1
4
2
3
1. Collector
2. Base
3. Emitter
4. Base
Value
45
2.5
30
200
-65 to +200
3.3
Unit
W
A
V
0_C
0_C
0_C/W
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