AM1517-012 Datasheet, PDF (1/6 Pages) STMicroelectronics – SATELLITE COMMUNICATIONS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM1517-012
RF & MICROWAVE TRANSISTORS
SATELLITE COMMUNICATIONS APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
∞^{:1 VSWR CAPABILITY}
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
METAL/CERAMIC HERMETIC PACKAGE
POUT = 12 W MIN. WITH 8.5 dB GAIN
.400 x .400 2NLFL (S042)
hermeticallysealed
ORDER CODE
AM1517-012
BR AN DI NG
1517-12
DESCRIPTION
The AM1517-012 power transistor is designed spe-
cifically for Satellite communications applications
in the 1.5 − 1.7 GHz frequency range.
The device is capable of withstanding any mis-
match load condition at any phase angle (VSWR
∞^{:1) under full rated conditions. The unit is an}
overlay, emitter site ballasted, geometry utilizing
a Refractory/Gold metallization system.
The AM1517-012 is supplied in the AMPAC™ Her-
metic/Ceramic package with internal Input/Output
matching structures.
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
PDISS
I_C
V_CC
TJ
TSTG
Pa ra met er
Power Dissipation* (TC ≤100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
September 1992
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
Value
Unit
27
W
1.25
A
30
V
200
°_C
− 65 to +200
°_C
5.5
°C/W
1/6