AM1214-250 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF POWER TRANSISTORS L-BAND RADAR APPLICATIONS

• REFRACTORY /GOLD METALLIZATION
• EMITTER SITE BALLASTING
• LOW RF THERMAL RESISTANCE
• INPUT/OUTPUT MATCHING
• OVERLAY GEOMETRY
• METAL/CERAMIC HERMETIC PACKAGE
• P_OUT = 300 W MIN. WITH 8.0 dB GAIN
• 1215-1400 MHz OPERATION
AM1214-250
RF POWER TRANSISTORS
L-BAND RADAR APPLICATIONS
TARGET DATA
M259
hermetically sealed
ORDER CODE
AM1214-250
BRANDING
XAM1214-250
DESCRIPTION
The AM1214-250 is a rugged, Class C common
base device designed for new L - Band medium &
long pulse radar applications.
Minimal amplitude droop over a long pulse of 500
microsec. is guaranteed by a thermal design incor-
porating an overlay site-ballasted die geometry.
ABSOLUTE MAXIMUM RATINGS (T_CASE = 25°C)
Symbol
Parameter
P_DISS Power Dissipation (T_C ≤ 85°C)*
I_C
Device Current*
V_CBO Collector-Base Voltage
T_j
Operating Junction Temperature
T_STG
Storage Temperature
THERMAL DATA
R_th(j-c) Junction -Case Thermal Resistance*
* Applies only to rated RF amplifier operation: 150 microsec / 10%
July 2000
PIN CONNECTION
1
4
1. Collector
2. Base
2
3
3. Emitter
4. Base
Value
Unit
786
W
21
A
70
V
+250
°C
-65 to +200
°C
0.21
°C/W
1/4