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| AM1011-400 Datasheet, PDF (1/6 Pages) STMicroelectronics – L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS | |||
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AM1011-400
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
15:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 400 W MIN. WITH 8.0 dB GAIN
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM1011-400
BRANDING
1011-400
DESCRIPTION
The AM1011-400 device is a high power Class
C transistor specifically designed for TCAS and
Mode-S pulsed output and driver applications.
This device is designed for operation under moder-
ate pulse width and duty cycle pulse conditions
and is capable of withstanding 15:1 output VSWR
at rated RF conditions. Low RF thermal resistance
and computerized automatic wire bonding tech-
niques ensure high reliability and product consist-
ency.
The AM1011-400 is supplied in the BIGPAC⢠Her-
metic Metal/Ceramic package Input/Output match-
ing structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Pa ra met er
Power Dissipation* (TC ⤠100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
Unit
880
W
24
A
55
V
250
°C
â 65 to +200
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.17
°C/W
September 1992
1/6
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