AM1011-300 Datasheet, PDF (1/5 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

AM1011-300
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTING
LOW RF THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 325 W MIN. WITH 7.7 dB GAIN
1030/1090 MHZ OPERATION
.400 x .600 2LFL (M207)
hermetically sealed
O RDER CODE
AM1011-300
BRANDING
AM1011-300
PIN CONNECTION
DE SC RI P TI O N
The AM1011-300 is a rugged, Class C common
base device specifically designed for new Mode-
S interrogator and transponder applications.
Minimal amplitude droop over the heavy Mode-S
pulse burst is guarante ed by a thermal design in-
corporating an overlay site-ballasted die geome-
try.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Sy mb o l
P_{D IS S}
I_C
V_CC
T_J
T_STG
Parameter
Power Dissipation
Device Current*
(T_C ≤100°C)*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF operation)
Storage Temperature
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation.
Va l u e
Unit
1070
W
36
A
43
V
+250
°_C
− 65 to +200
°_C
0.14
°C/W
December 9, 1997
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