AM1011-075 Datasheet, PDF (1/4 Pages) STMicroelectronics – L-BAND AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM1011-075
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
10:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 75 W MIN. WITH 9.2 dB GAIN
.400 x .400 2LFL (S036)
hermetically sealed
ORDER CODE
AM1011-075
BRANDING
1011-75
DESCRIPTION
The AM1011-075 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures and is capable of withstanding 10:1 output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-075 is supplied in the AMPAC™ Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
Pa ra met er
PDISS
Power Dissipation* (TC ≤ 100°C)
I_C
Device Current*
V_CC
Collector-Supply Voltage*
TJ
Junction Temperature (Pulsed RF Operation)
TSTG
Storage Temperature
THERMAL DATA
R_TH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
September 1992
Value
Unit
175
W
5.4
A
55
V
250
°_C
− 65 to +200
°_C
0.86
°C/W
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