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| AM1011-070 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS L-BAND AVIONICS APPLICATIONS | |||
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AM1011-070
RF & MICROWAVE TRANSISTORS
L-BAND AVIONICS APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 70 W MIN. WITH 6.7 dB GAIN
.400 x .400 2NLFL (S042)
hermeticaly sealed
ORDER CODE
AM1011-70
BRANDING
1011-70
DESCRIPTION
The AM1011-070 device is a high power Class
C transistor specifically designed for L-Band
Avionics transponder/interrogator pulsed output
and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures and is capable of withstanding severe output
VSWR at rated RF conditions. Low RF thermal
resistance and computerized automatic wire bond-
ing techniques ensure high reliability and product
consistency.
The AM1011-070 is supplied in the AMPAC⢠Her-
metic Metal/Ceramic package with internal
Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Pa ra met er
Power Dissipation* (TC ⤠100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
Unit
200
W
8.0
A
32
V
250
°C
â 65 to +200
°C
0.68
°C/W
September 1992
1/4
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