 English |
|
|
|
|
|
|
|
| AM0912-300 Datasheet, PDF (1/6 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS | |||
| |||
|
AM0912-300
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
......... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
15:1 VSWR CAPABILITY
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 300 W MIN. WITH 7.0 dB GAIN
BANDWIDTH 255 MHz
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM0912-300
B RA ND IN G
0912-300
DESCRIPTION
The AM0912-300 avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
The AM0912-300 is also designed for specialized
applications where reduced power is provided
under pulse formats utilizing short pulse widths
and high burst or overall duty cycles.
This device is capable of withstanding 15:1 VSWR
mismatch load condition at any phase angle under
full rated conditions.
The AM0912-300 is housed in the unique BIG-
PAC⢠Hermetic Metal/Ceramic package with in-
ternal Input/Output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Pa ra met er
Power Dissipation* (TC ⤠100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
Unit
940
W
24
A
50
V
250
°C
â 65 to +200
°C
0.16
°C/W
September 1992
1/6
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese