English
Language : 

AM0912-150 Datasheet, PDF (1/6 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS
AM0912-150
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 150 W MIN. WITH 7.5 dB GAIN
BANDWIDTH = 255MHz
.400 x .500 2LFL (S038)
hermetically sealed
ORDER CODE
AM0912-150
BRANDING
0912-150
PIN CONNECTION
DESCRIPTION
The AM0912-150 is designed for specialized
avionics applications including Mode-S, TCAS and
JTIDS, where power is provided under pulse for-
mats utilizing short pulse widths and high burst
or overall duty cycles.
The AM0912-150 is housed in the unique BIG-
PAC™ Hermetic Metal/Ceramic package with in-
ternal Input/Output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symb ol
PDISS
IC
VCC
TJ
TSTG
Pa ra met er
Power Dissipation* (TC ≤ 100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
Value
Unit
300
W
16.5
A
35
V
250
°C
− 65 to +200
°C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.57
°C/W
September 1992
1/6