74V1G66_08 Datasheet, PDF (1/15 Pages) STMicroelectronics – Single bilateral switch

74V1G66
Single bilateral switch
Features
■ High speed:
t_PD = 0.3 ns (typ.) at V_CC = 5 V
t_PD = 0.4 ns (typ.) at V_CC = 3.3 V
■ Low power dissipation:
I_CC = 1 μA (max.) at T_A = 25 °C
■ Low "ON" resistance:
R_ON = 6.5 Ω (typ.) at V_CC = 5 V I_I/O = 1 mA
R_ON = 8.5 Ω (typ.) at V_CC = 3.3 V I_I/O = 1 mA
■ Sine wave distortion:
0.04% at V_CC = 3.3 V f = 1 kHz
■ Wide operating range:
V_CC (opr) = 2 V to 5.5 V
■ Improved latch-up immunity
SOT23-5L
SOT323-5L
Description
The 74V1G66 is an advanced high-speed CMOS
single bilateral switch fabricated in silicon gate
C²MOS technology. It achieves high speed
propagation delay and very low ON resistances
while maintaining true CMOS low power
consumption. This bilateral switch handles rail to
rail analog and digital signals that may vary
across the full power supply range (from GND to
V_CC).
The C input is provided to control the switch and it
is compatible with standard CMOS outputs. The
switch is ON (port I/O is connected to port O/I)
when the C input is held high and OFF (high
impedance state exists between the two ports)
when C is held low. It can be used in many
applications as battery powered systems or test
equipments.
The 74V1G66 is available in the commercial and
extended temperature range in SOT23-5L and
SOT323-5L packages.
All inputs and outputs are equipped with
protection circuits against static discharge, giving
them ESD immunity and transient excess voltage.
Table 1. Device summary
Order code
74V1G66STR
74V1G66CTR
Package
SOT23-5L
SOT323-5L
Packaging
Tape and reel
Tape and reel
October 2008
Rev 8
1/15
www.st.com
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