74V1G66_04 Datasheet, PDF (1/11 Pages) STMicroelectronics – SINGLE BILATERAL SWITCH

74V1G66
SINGLE BILATERAL SWITCH
s HIGH SPEED:
t_PD = 0.3ns (TYP.) at V_CC = 5V
t_PD = 0.4ns (TYP.) at V_CC = 3.3V
s LOW POWER DISSIPATION:
I_CC = 1µA(MAX.) at T_A=25°C
s LOW "ON" RESISTANCE:
R_ON =6.5Ω (TYP.) AT V_CC = 5V I_I/O = 1mA
R_ON = 8.5Ω (TYP.) AT V_CC = 3.3V I_I/O = 1mA
s SINE WAVE DISTORTION:
0.04% AT V_CC = 3.3V f = 1KHz
s WIDE OPERATING RANGE:
V_CC (OPR) = 2V TO 5.5V
s IMPROVED LATCH-UP IMMUNITY
DESCRIPTION
The 74V1G66 is an advanced high-speed CMOS
SINGLE BILATERAL SWITCH fabricated in
silicon gate C²MOS technology. It achieves high
speed propagation delay and VERY LOW ON
resistances while maintaining true CMOS low
power consumption. This bilateral switch handles
rail to rail analog and digital signals that may vary
across the full power supply range (from GND to
V_CC).
The C input is provided to control the switch and
it’s compatible with standard CMOS output; the
SOT23-5L
SOT323-5L
ORDER CODES
PACKAGE
SOT23-5L
SOT323-5L
T&R
74V1G66STR
74V1G66CTR
switch is ON (port I/O is connected to Port O/I)
when the C input is held high and OFF (high
impedance state exists between the two ports)
when C is held low. It can be used in many
application as Battery Powered System, Test
Equipment. It’s available in the commercial and
extended temperature range in SOT23-5L and
SC-70-5L package. All inputs and output are
equipped with protection circuits against static
discharge, giving them ESD immunity and
transient excess voltage
PIN CONNECTION AND IEC LOGIC SYMBOLS
April 2004
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