2STW4466_08 Datasheet, PDF (1/9 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor

2STW4466
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO = 80 V
■ Complementary to 2STW1693
■ Typical f_t = 20 MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured in
low voltage planar technology using base island
layout. The resulting transistor shows good gain
linearity coupled with low V_CE(sat) behaviour.
Recommended for 40 W to 70 W high fidelity
audio frequency amplifier output stage.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STW4466
Marking
2STW4466
Package
TO-247
Packaging
Tube
September 2008
Rev 2
1/9
www.st.com
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