2STW1695_08 Datasheet, PDF (1/9 Pages) STMicroelectronics – High power PNP epitaxial planar bipolar transistor

2STW1695
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO = -140 V
■ Complementary to 2STW4468
■ Typical f_t = 20 MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70 W to 100 W high fidelity
audio frequency amplifier output stage.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STW1695
Marking
2STW1695
Package
TO-247
Packaging
Tube
October 2008
Rev 4
1/9
www.st.com
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