2STW1695 Datasheet, PDF (1/9 Pages) STMicroelectronics – High power PNP epitaxial planar bipolar transistor

2STW1695
High power PNP epitaxial planar bipolar transistor
General features
■ High breakdown voltage V_CEO = -140V
■ Complementary to 2STW4468
■ Typical f_t =20MHz
■ Fully characterized at 125 ^oC
■ In compliance with the 2002/93/EC European
Directive
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
3
2
1
TO-247
Internal schematic diagram
Order codes
Part Number
2STW1695
Marking
2STW1695
Package
TO-247
Packing
Tube
February 2007
Rev 3
1/9
www.st.com
9