2STF2550 Datasheet, PDF (1/8 Pages) STMicroelectronics – Very low collector-emitter saturation voltage

2STF2550
2STN2550
Low voltage high performance PNP power transistors
Preliminary Data
Features
■ Very low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
■ Surface mounting devices in medium power
SOT-89 and SOT-223 packages
Applications
■ Emergency lighting
■ LED
■ Motherboard and hard disk drive
■ Mobile equipment
■ Battery charger
■ Voltage regulation
4
4
3
2
1
3
2
1
SOT-89
SOT-223
Figure 1. Internal schematic diagram
Description
The 2STF2550 and 2STN2550 are PNP
transistors manufactured using new “PB-HCD”
(Power bipolar high current density) technology.
The resulting transistor shows exceptional high
gain performances coupled with very low
saturation voltage.
Table 1. Device summary
Order codes
2STF2550
2STN2550
Marking
2550
N2550
Package
SOT-89
SOT-223
Packaging
Tape and reel
November 2008
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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