2STF2280 Datasheet, PDF (1/7 Pages) STMicroelectronics – Low collector-emitter saturation voltage

2STF2280
Low voltage high performance PNP power transistor
Preliminary data
Features
■ Low collector-emitter saturation voltage
■ High current gain characteristic
■ Fast switching speed
Applications
■ DC-DC converter, voltage regulation
■ General purpose switching equipment
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SOT-89
Description
The device is a PNP transistor manufactured
using new “PB-HCD” (power bipolar high current
density) technology. The resulting transistor
shows exceptional high gain performances
coupled with very low saturation voltage.
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STF2280
Marking
2280
Package
SOT-89
Packaging
Tape and reel
January 2010
Doc ID 16984 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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