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2STC5949 Datasheet, PDF (1/8 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor | |||
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2STC5949
High power NPN epitaxial planar bipolar transistor
Features
â High breakdown voltage VCEO = 250 V
â Complementary to 2STA2121
â Fast-switching speed
â Typical ft = 25 MHz
â Fully characterized at 125 oC
Applications
â Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC5949
Marking
2STC5949
Package
TO-264
Packaging
Tube
July 2008
Rev 3
1/8
www.st.com
8
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