2STC5948 Datasheet, PDF (1/8 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor

2STC5948
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO = 250 V
■ Complementary to 2STA2120
■ Fast-switching speed
■ Typical f_t = 25 MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC5948
Marking
2STC5948
Package
TO-3P
Packaging
Tube
May 2008
Rev 2
1/8
www.st.com
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