2STC5242 Datasheet, PDF (1/9 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor

2STC5242
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO = 230 V
■ Complementary to 2STA1962
■ Fast-switching speed
■ Typical f_T = 30 MHz
Application
■ Audio power amplifier
Description
This device is a NPN transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC5242
Marking
2STC5242
Package
TO-3P
Packaging
Tube
July 2008
Rev 3
1/9
www.st.com
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