2STC5200 Datasheet, PDF (1/9 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor

2STC5200
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO > 230V
■ Complementary to 2STA1943
■ Fast-switching speed
■ Typical f_T = 30 MHz
Application
■ Audio power amplifier
Description
This device is a NPN transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
1 ²³
TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC5200
Marking
2STC5200
Package
TO-264
Packaging
Tube
December 2007
Rev 2
1/9
www.st.com
9