2STC4468 Datasheet, PDF (1/9 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor

2STC4468
High power NPN epitaxial planar bipolar transistor
General features
■ High breakdown voltage V_CEO=140V
■ Complementary to 2STA1695
■ Fast-switching speed
■ Typical f_t =20MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
Preliminary data
3
2
1
TO-3P
Internal schematic diagram
Order codes
Part Number
2STC4468
Marking
2STC4468
Electrical ratings
Package
TO-3P
Packaging
Tube
June 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/9
www.st.com
9