2STC4467 Datasheet, PDF (1/7 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor

2STC4467
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO = 120 V
■ Complementary to 2STA1694
■ Fast-switching speed
■ Typical f_t = 20 MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
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2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC4467
Marking
2STC4467
Package
TO-3P
Packaging
Tube
April 2008
Rev 2
1/7
www.st.com
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