|
2STC2510 Datasheet, PDF (1/7 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor | |||
|
2STC2510
High power NPN epitaxial planar bipolar transistor
Features
â High breakdown voltage VCEO = 100 V
â Complementary to 2STA2510
â Fast-switching speed
â Typical ft = 20 MHz
â Fully characterized at 125 oC
Applications
â Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STC2510
Marking
2STC2510
Package
TO-3P
Packaging
Tube
May 2008
Rev 2
1/7
www.st.com
7
|
▷ |