2STBN15D100 Datasheet, PDF (1/7 Pages) STMicroelectronics – Low voltage NPN power Darlington transistor

2STBN15D100
Low voltage NPN power Darlington transistor
Features
■ Good h_FE linearity
■ High f_T frequency
■ Monolithic Darlington configuration with
integrated antiparallel collector-emitter diode
Application
■ Linear and switching industrial equipment
Description
The device is manufactured in planar technology
with “base island” layout and monolithic
Darlington configuration.
TAB
3
1
D²PAK
Figure 1. Internal schematic diagrams
R₁ = 8 kΩ
R₂ = 150 Ω
Table 1. Device summary
Order code
2STBN15D100T4
Marking
BN15D100
Package
D²PAK
January 2010
Doc ID 16117 Rev 2
Packaging
Tape and reel
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www.st.com
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