2STA2510 Datasheet, PDF (1/7 Pages) STMicroelectronics – High power PNP epitaxial planar bipolar transistor

2STA2510
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO = -100 V
■ Complementary to 2STC2510
■ Fast-switching speed
■ Typical f_t = 20 MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STA2510
Marking
2STA2510
Package
TO-3P
Packaging
Tube
May 2008
.
Rev 2
1/7
www.st.com
A7