2STA2121 Datasheet, PDF (1/8 Pages) STMicroelectronics – High power PNP epitaxial planar bipolar transistor

2STA2120
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
■ High breakdown voltage V_CEO = 250 V
■ Complementary to 2STC5948
■ Fast-switching speed
■ Typical f_t = 25 MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
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TO-3P
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STA2120
Marking
2STA2120
Package
TO-3P
Packaging
Tube
May 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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