2STA1962 Datasheet, PDF (1/9 Pages) STMicroelectronics – High power PNP epitaxial planar bipolar transistor

2STA1962
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO = -230 V
■ Complementary to 2STC5242
■ Fast-switching speed
■ Typical f_T = 30 MHz
Application
■ Audio power amplifier
Description
This device is a PNP transistor manufactured
using new BiT-LA (Bipolar Transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
3
2
1
TO-3P
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STA1962
Marking
2STA1962
Package
TO-3P
Packaging
Tube
July 2008
Rev 3
1/9
www.st.com
9