2STA1695 Datasheet, PDF (1/9 Pages) STMicroelectronics – High power PNP epitaxial planar bipolar transistor

2STA1695
High power PNP epitaxial planar bipolar transistor
General features
■ High breakdown voltage V_CEO = -140V
■ Complementary to 2STC4468
■ Typical f_t =20MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Recommended for 70W to 100W high fidelity
audio frequency amplifier output stage.
Preliminary data
3
2
1
TO-3P
Internal schematic diagram
Order codes
Part Number
2STA1695
Marking
2STA1695
Package
TO-3P
Packaging
Tube
June 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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