2ST5949_0807 Datasheet, PDF (1/8 Pages) STMicroelectronics – High power NPN epitaxial planar bipolar transistor

2ST5949
High power NPN epitaxial planar bipolar transistor
Features
■ High breakdown voltage V_CEO = 250 V
■ Complementary to 2ST2121
■ Fast-switching speed
■ Typical f_t = 25 MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
Description
The device is a NPN transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
1
2
TO-3
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2ST5949
Marking
2ST5949
Package
TO-3
Packaging
tray
July 2008
Rev 3
1/8
www.st.com
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