2ST501T Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE NPN POWER TRANSISTOR

2ST501T
HIGH VOLTAGE NPN POWER TRANSISTOR
n HIGH VOLTAGE SPECIAL DARLINGTON
STRUCTURE
n VERY RUGGED BIPOLAR TECHNOLOGY
n HIGH OPERATION JUNCTION
TEMPERATURE
n HIGH DC CURRENT GAIN
APPLICATIONS
n DRIVER FOR SOLENOID, RELAY AND
MOTOR
DESCRIPTION
The 2ST501T is a High Voltage NPN silicon
transistor in monolithic special Darlington
configuration mounted in Jedec TO-220 plastic
package.
Figure 1: Package
3
2
1
TO-220
Figure 2: Internal Schematic Diagram
Table 1: Order Codes
Part Number
2ST501T
Marking
2ST501T
Table 2: Absolute Maximum Ratings
Symbol
V_CES
V_CEO
V_EBO
I_C
I_CM
I_B
I_BM
P_tot
T_stg
T_J
Parameter
Collector-Emitter Voltage (V_BE = 0)
Collector-Emitter Voltage (I_B = 0)
Emitter-Base Voltage (I_C = 0)
Collector Current
Collector Peak Current (t_p < 5ms)
Base Current
Base Peak Current (t_p < 5ms)
Total Dissipation at T_C = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
February 2005
Package
TO-220
Packaging
TUBE
Value
500
350
5
4
8
0.5
2.5
100
-65 to 150
150
Rev. 1
Unit
V
V
V
A
A
A
A
W
°C
°C
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