2ST2121 Datasheet, PDF (1/8 Pages) STMicroelectronics – High power PNP epitaxial planar bipolar transistor

2ST2121
High power PNP epitaxial planar bipolar transistor
Preliminary data
Features
■ High breakdown voltage V_CEO = 250 V
■ Complementary to 2ST5949
■ Fast switching speed
■ Typical f_t = 25 MHz
■ Fully characterized at 125 ^oC
Applications
■ Audio power amplifier
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TO-3
Description
The device is a PNP transistor manufactured
using new BiT-LA (Bipolar transistor for linear
amplifier) technology. The resulting transistor
shows good gain linearity behaviour.
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2ST2121
Marking
2ST2121
Package
TO-3
Packaging
tray
July 2008
Rev 4
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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