2SC5200 Datasheet, PDF (1/8 Pages) Unisonic Technologies – POWER AMPLIFIER APPLICATIONS

2SC5200
High power NPN epitaxial planar bipolar transistor
Preliminary data
Features
■ High breakdown voltage V_CEO = 230 V
■ Typical f_T = 30 MHz
t(s) ^Application
c ^{■ Audio power amplifier}
rodu ^Description
P This device is a NPN transistor manufactured
te ^{using new BiT-LA (bipolar transistor for linear}
amplifier) technology. The resulting transistor
Obsolete ^{Product(s) - Obsole shows good gain linearity behaviour.}
1 ²³
TO-264
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2SC5200
Marking
2SC5200
Package
TO-264
Packaging
Tube
September 2009
Doc ID 16310 Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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