2N6668 Datasheet, PDF (1/4 Pages) STMicroelectronics – SILICON PNP POWER DARLINGTON TRANSISTOR

2N6668
SILICON PNP POWER DARLINGTON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s PNP DARLINGTON
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS:
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at Tc ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP type voltage and current values are negative.
July 1997
R1(typ) = 8 kΩ R2(typ) = 120 Ω
Value
80
80
5
10
15
250
65
-65 to 150
150
Unit
V
V
V
A
A
mA
W
o_C
o_C
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