2N6547 Datasheet, PDF (1/4 Pages) ON Semiconductor – NPN SILICON POWER TRANSISTORS

®
2N6547
HIGH POWER NPN SILICON TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s NPN TRANSISTOR
s HIGH VOLTAGE CAPABILITY
s HIGH CURRENT CAPABILITY
s FAST SWITCHING SPEED
APPLICATIONS
s SWITCH MODE POWER SUPPLIES
s FLYBACK AND FORWARD SINGLE
TRANSISTOR LOW POWER CONVERTERS
1
2
TO-3
DESCRIPTION
The 2N6547 is a silicon Multiepitaxial Mesa NPN
transistor mounted in TO-3 metal case. It is
particulary intended for switching and industrial
applications from single and tree-phase mains.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCER Collector-Emitter Voltage (R_BE = 50 Ω)
VCES Collector-Emitter Voltage (VBE = 0)
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Base Current
Base Peak Current
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
October 2001
Value
850
850
400
9
15
30
4
20
175
-65 to200
200
Unit
V
V
V
V
A
A
A
A
W
o_C
o_C
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