2N6059_03 Datasheet, PDF (1/4 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTOR

®
2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
s STMicrolectronics PREFERRED
SALESTYPE
s HIGH GAIN
s NPN DARLINGTON
s HIGH CURRENT
s HIGH DISSIPATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6059 is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEX
VCEO
VEBO
IC
ICM
IB
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = -1.5V)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Total Dissipation at Tc ≤ 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
February 2003
R1 Typ. = 6 KΩ
R2 Typ. = 55 Ω
Value
100
100
100
5
12
20
0.2
150
-65 to 200
200
Unit
V
V
V
V
A
A
A
W
o_C
o_C
1/4