2N6059 Datasheet, PDF (1/4 Pages) STMicroelectronics – SILICON NPN POWER DARLINGTON TRANSISTOR

2N6059
SILICON NPN POWER DARLINGTON TRANSISTOR
s SGS-THOMSON PREFERRED SALESTYPE
s HIGH GAIN
s NPN DARLINGTON
s HIGH CURRENT
s HIGH DISSIPATION
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N6059 is a silicon epitaxial-base NPN
transistor in monolithic Darlington configuration
mounted in Jedec TO-3 metal case.
It is inteded for use in power linear and low
frequency switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEX Collector-Emitter Voltage (VBE = -1.5V)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at Tc ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
June 1997
R1 Typ. = 6 KΩ
R2 Typ. = 55 Ω
Value
100
100
100
5
12
20
0.2
150
-65 to 200
200
Unit
V
V
V
V
A
A
A
W
o_C
o_C
1/4