2N6036_00 Datasheet, PDF (1/6 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

2N6036
2N6039
®
COMPLEMENTARY SILICON
POWER DARLINGTON TRANSISTORS
s 2N6036 IS A STMicroelectronics
PREFERRED SALESTYPE
s COMPLEMENTARY PNP - NPN DEVICES
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATIONS
s GENERAL PURPOSE SWITCHING
s GENERAL PURPOSE AMPLIFIER
DESCRIPTION
The 2N6036 and 2N6039 are complementary
silicon power Darlington transistors mounted in
Jedec SOT-32 plastic package.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 7 KΩ
R2 Typ. = 230 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at Tc ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
PNP
NPN
December 2000
Value
2N6036
2N6039
80
80
5
4
8
0.1
40
-65 to 150
150
Unit
V
V
V
A
A
A
W
o_C
o_C
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