2N5886 Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH CURRENT SILICON NPN POWER TRANSISTOR

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2N5886
HIGH CURRENT SILICON NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s HIGH CURRENT CAPABILITY
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5886 is a silicon Epitaxial-Base NPN
power transistor mounted in Jedec TO-3 metal
case. It is inteded for use in power linear
amplifiers and switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at T_c ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
January 2000
Value
80
80
5
25
50
7.5
200
-65 to 200
200
Unit
V
V
V
A
A
A
W
o_C
o_C
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