2N5884 Datasheet, PDF (1/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON HIGH POWER TRANSISTORS

2N5884
2N5886
COMPLEMENTARY SILICON
HIGH POWER TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
s HIGH CURRENT CAPABILITY
APPLICATIONS
s GENERAL PURPOSE SWITCHING AND
AMPLIFIER
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The 2N5884 and 2N5886 are complementary
silicon power transistor in Jedec TO-3 metal case
inteded for use in power linear amplifiers and
switching applications.
1
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
VEBO Emitter-Base Voltage (IC = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at Tc ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
June 1997
PNP
NPN
Value
2N5884
2N5886
80
80
5
25
50
7.5
200
-65 to 200
200
Unit
V
V
V
A
A
A
W
o_C
o_C
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