2N3019HR Datasheet, PDF (1/9 Pages) STMicroelectronics – Hi-Rel NPN bipolar transistor 80 V, 1 A

2N3019HR
Hi-Rel NPN bipolar transistor 80 V, 1 A
Features
BV_CEO
I_C (max)
H_FE at 10 V - 150 mA
Operating temperature range
80 V
1A
> 100
-65°C to +200°C
Datasheet — production data
■ Hi-Rel NPN bipolar transistor
■ Linear gain characteristics
■ ESCC qualified
■ European preferred part list - EPPL
■ Radiation level: lot specific total dose contact
marketing for specified level
Description
The 2N3019HR is a silicon planar epitaxial NPN
transistor in a TO-39 package. It is specifically
designed for aerospace Hi-Rel applications, and
ESCC qualified in accordance with the 5201-003
specification. In case of discrepancies between
this datasheet and ESCC detailed specification,
the latter prevails.
TO-39
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Package
Lead finish
2N3019HR
TO-39
Gold
Solder Dip
Marking
520101103
520101104
Type
ESCC Flight
EPPL
Yes
Packaging
Strip pack
October 2012
This is information on a product in full production.
Doc ID 15384 Rev 3
1/9
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